APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 1-8 all ratings @ t j = 25c unless otherwise specified these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 5/6 ; 9/10 trench & field stop igbt q2, q3: v ces = 600v ; i c = 30a @ tc = 80c coolmos? q1, q4: v dss = 600v ; i d = 17a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? q2, q3 trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? q1, q4 coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? very low stray inductance ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter coolmos & trench + field stop igbt power module
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 2-8 q1 & q4 absolute maximum ratings q1 & q4 electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 50 i dss zero gate voltage drain current v gs = 0v v ds = 600v t j = 125c 100 a r ds(on) drain ? source on resistance v gs = 10v, i d = 18a 99 m v gs(th) gate threshold voltage v gs = v ds , i d = 1.2 ma 2.5 3 3.5 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na q1 & q4 dynamic characteristics dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 2800 c oss output capacitance v gs = 0v ; v ds = 100v f = 1mhz 130 pf q g total gate charge 14 q gs gate ? source charge 20 q gd gate ? drain charge v gs = 10v v bus = 400v i d = 18a 60 nc t d(on) turn-on delay time 10 t r rise time 5 t d(off) turn-off delay time 60 t f fall time v gs = 10v v bus = 400v i d = 18a r g = 3.3 ? 5 ns r thjc junction to case thermal resistance 1.15 c/w q2 & q3 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 50 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 60 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 90 w rbsoa reverse bias safe operating area t j = 150c 60a @ 550v symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 22 i d continuous drain current t c = 80c 17 i dm pulsed drain current 75 a v gs gate - source voltage 20 v r dson drain - source on resistance 99 m p d maximum power dissipation t c = 25c 110 w i ar avalanche current (repetitive and non repetitive) 11 a e ar repetitive avalanche energy 1.2 e as single pulse avalanche energy 800 mj
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 3-8 q2 & q3 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 30a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 400a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 300 na q2 & q3 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1600 c oes output capacitance 110 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 50 pf q g gate charge v ge =15v, i c =30a v ce =300v 0.3 c t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 30a r g = 10 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 30a r g = 10 60 ns t j = 25c 0.16 e on turn-on switching energy t j = 150c 0.3 mj t j = 25c 0.7 e off turn-off switching energy v ge = 15v v bus = 300v i c = 30a r g = 10 t j = 150c 1.05 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 150 a r thjc junction to case thermal resistance 1.6 c/w
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 4-8 cr2, cr3, cr5 & cr6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.2 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc e rr reverse recovery energy i f = 30a v r = 400v di/dt =1000a/s t j = 125c 0.6 mj r thjc junction to case thermal resistance 1.2 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g * tjmax = 150c for q1 & q4 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 5-8 q2 & q3 typical performance curve hard switching 0 20 40 60 80 010203040 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =10 ? t j =150c t c =85c operating frequency vs collector current output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 10 20 30 40 50 60 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 10 20 30 40 50 60 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =150c 0 10 20 30 40 50 60 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 0.5 1 1.5 2 0 102030405060 i c (a) e (mj) v ce = 300v v ge = 15v r g = 10 ? t j = 150c eon eon eoff 0 0.5 1 1.5 2 2.5 0 10203040506070 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 30a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =10 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w)
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 6-8 q1 & q4 typical performance curve
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 7-8 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4.5v 6v 6.5v 0 40 80 120 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =10, 20v 0 5 10 15 20 25 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 600 625 650 675 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage maximum safe operating area 10 ms 100 s 0.1 1 10 100 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r d s on single pulse t j =150c t c =25c ciss crss coss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 102030405060 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =400v i d =18a t j =25c
APTCV60TLM991G APTCV60TLM991G ? rev 0 march, 2009 www.microsemi.com 8-8 cr2, cr3, cr5 & cr6 typical performance curve forward characteristic of diode t j =25c t j =125c 0 20 40 60 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v f (v) i f (a) energy losses vs collector current 0 0.25 0.5 0.75 1 0 20406080 i c (a) e (mj) v ce = 400v v ge = 15v r g = 2.5 ? t j = 125c 0 0.25 0.5 0.75 1 0246810 gate resistance (ohms) e (mj) v ce = 400v v ge =15v i c = 30a t j = 125c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
|
